2SA1201 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
z High voltage
z High transition frequency
z Small flatpackage
z Complementary to 2SC2881
Pb
Lead-free
Production specification
2SA1201
ORDERING INFORMATION
Type No.
Marking
2SA1201
DO/DY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
-120
-120
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current
-800
I_B
Base Current
-160
P_C
Collector Dissipation
500
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
℃
E037
Rev.A
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