2SA1162 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise:NF=1dB(Typ),10dB(Max).
z Commplementary to 2SC2712.
z Small package.
Pb
Lead-free
Production specification
2SA1162
APPLICATIONS
z General purpose application.
ORDERING INFORMATION
Type No.
Marking
2SA1162
SO/SY/SG
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-50
V_CEO
Collector-Emitter Voltage
-50
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-150
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55~125
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC0092
Rev.A
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