2SA1015 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

Silicon Epitaxial Planar Transistor
FEATURES
z Complementary To 2SC1815.
z Excellent H_FE Linearity.
Pb
Lead-free
z High voltage and high current.
z Low noise.
z Collector-Emitter voltage BV_CEO=-50V.
APPLICATIONS
z Low frequency , low noise amplifier.
Production specification
2SA1015
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SA1015
BA
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-50
V
-5
V
I_C
P_C
T_j,T_stg
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-150
mA
400
mW
-55 to +150
℃
C011
Rev.A
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