2PD601AW Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistor

BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(I_C= 100mA）
z Excellent H_FE Linearity.
z Power dissipation.(P_C=200mW)
Pb
Lead-free
APPLICATIONS
z General purpose application.
Production specification
2PD601AW
ORDERING INFORMATION
Type No.
Marking
2PD601AW
6D/6E/6F
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current -Continuous
100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF028
Rev.A
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