2N7002_08 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Small Signal MOSFET Transistor

BL Galaxy Electrical
Small Signal MOSFET Transistor
FEATURES
z High Density Cell Design For Low
R_DS(ON)。
z Voltage Controlled Small Switch.
z Rugged and Reliable.
z High Saturation Current Capability.
Pb
Lead-free
Production specification
2N7002
APPLICATIONS
z N-channel enhancement mode effect transistor.
z Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002
3P
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_DGR
V_GSS
I_D
P_D
R_θJA
Drain-Source voltage
60
Drain-Gate voltage(R_GS≤1MΩ)
60
Gate -Source voltage - continuous
±20
-Non Repetitive (t_p<50μs)
±40
Maximum Drain current -continuous
115
-Pulsed
800
Power Dissipation
200
Thermal resistance,Junction-to-Ambient
625
Units
V
V
V
mA
mW
℃/W
T_J, Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSMTC008
Rev.A
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