2N7002T Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BL Galaxy Electrical
Production specification
Small Signal MOSFET Transistor
FEATURES
z Low on-resistance.
z Low gate threshold voltge.
z Low input capacitance.
z Fast switching speed.
z Low input/output leakage.
Pb
Lead-free
2N7002T
APPLICATIONS
z N-channel enhancement mode effect transistor.
z Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002T
72
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_DGR
V_GSS
I_D
P_D
R_θJA
Drain-Source voltage
Drain-Gate voltage(R_GS≤1MΩ)
Gate -Source voltage - continuous
-Non Repetitive (t_p<50μs)
Maximum Drain current -continuous
-Pulsed
Power Dissipation
Thermal resistance,Junction-to-Ambient
60
60
±20
±40
115
800
150
833
T_J, Tstg
Junction and Storage Temperature
-55-150
Units
V
V
V
mA
mW
℃/W
℃
Document number: BL/SSMTH016
Rev.A
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