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1SS404_13 Datasheet, PDF (1/3 Pages) Micro Commercial Components – High Speed Switching Diode
Production specification
Silicon Epitaxial Planar Diode
FEATURES
z Small surface mounting type
z Fast reverse recovery time:IR=50μA(Max.)
z Small total capacitance :CT=46pF(typ.)
Pb
Lead-free
z Excellent in forward current and forward voltage
characteristics :VF=0.8V(Typ.)
1SS404
APPLICATIONS
z High speed switching
ORDERING INFORMATION
Type No.
Marking
1SS404
S51
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
25
V
DC Reverse Voltage
VR
20
V
Average Rectified Output Current
IO
300
mA
Power Dissipation
PD
200
mW
Junction temperature
Tj
125
℃
Storage temperature
TSTG
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min. TYP. Max. Unit
Forward voltage
0.16
VF
0.22
V
0.38 0.45
Reverse current
IR
50
μA
Capacitance between terminals CT
46
pF
Conditions
IF=1mA
IF=10mA
IF=300mA
VR=20V
VR=0V,f=1MHz
B007
Rev.A
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