1SS401_14 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

Schottky Barrier Diode
FEATURES
z Small total capacitance.
z Low reverse current.
z Low forward voltage:V_F=0.38V(typ).
Pb
Lead-free
Production specification
1SS401
APPLICATIONS
z For general purpose applications.
ORDERING INFORMATION
Type No.
Marking
1SS401
D9
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
Diode reverse voltage
V_R
Average rectified output current
I_O
Power Dissipation
P_d
Junction temperature
T_j
Storage temperature range
T_stg
25
V
20
V
300
mA
100
mW
125
℃
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
Reverse breakdown voltage V_(BR)R I_R=100μA
Reverse current
Forward voltage
Diode capacitance
I_R
V_R=20V
I_F=1mA
V_F
I_F=10mA
I_F=300mA
C_D
V_R=0V, f=1MHz
MIN Typ.
20
0.16
0.22
0.38
46
MAX
50
UNIT
V
μA
V
0.45
pF
PACKAGE OUTLINE
F014
Rev.A
www.gmicroelec.com
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