1SS389_12 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

Schottky Barrier Diode
FEATURES
z Low forward voltage.
z Small package.
Pb
Lead-free
Production specification
1SS389
APPLICATIONS
z High speed switching application.
ORDERING INFORMATION
Type No.
Marking
1SS389
S4
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC Reverse voltage
Maximum(peak) forward current
Continuous forward current
Surge current
Total power dissipation
Junction temperature
Storage temperature
Operating temperature range
V_RM
15
V
V_R
10
V
I_FM
200
mA
I_F
100
mA
I_FSM
1
A
P_tot
150
mW
T_j
125
℃
T_stg
-55 to +125
℃
T_opr
-40 to +100
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Symbol Min.
V_(BR)R
10
V_F
I_R
C_d
Typ. Max. Unit
V
0.18
V
0.23 0.30 V
0.35 0.50 V
20 μA
20 40 pF
Conditions
I_R=50μA
I_F=1mA
I_F=5mA
I_F=100mA
V_R=10V
V_R=0,f=1MHz
H005
Rev.A
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