1SS388_12 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

Production specification
Schottky Barrier Diode
FEATURES
z Low forward voltage.
z Low reverse current.
z Small package.
APPLICATIONS
z High-speed switching application.
Pb
Lead-free
ORDERING INFORMATION
Type No.
Marking
1SS388
S3
1SS388
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC Reverse voltage
V_RM
45
V
V_R
40
V
Maximum(peak) forward current
I_FM
300
mA
Continuous forward current
I_F
100
mA
Surge current(10ms)
I_FSM
1
A
Total power dissipation
P_tot
150
mW
Junction temperature
T_j
125
℃
Storage temperature range
Operating temperature range
T_stg
-55 to +125
℃
T_opr
-40 to +100
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Symbol Min. Typ.
0.28
V_F
0.36
0.54
I_R
C_d
18
Max. Unit
V
V
0.60 V
5 μA
25
pF
Conditions
I_F=1mA
I_F=10mA
I_F=50mA
V_R=10V
V_R=0,f=1MHz
H004
Rev.A
www.gmicroelec.com
1