1SS388 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (HGH SPEED SWITCHING APPLICATION)

BL Galaxy Electrical
Production specification
High Speed Switching Diode
FEATURES
z Low forward voltage.
z Low reverse current.
z Small package.
Pb
Lead-free
APPLICATIONS
z High-speed switching in surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
1SS388
S3
1SS388
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC Reverse voltage
V_RM
45
V
V_R
40
V
Continuous forward current
Surge current
I_F
100
mA
I_FSM
1
A
Total power dissipation
P_tot
150
mW
Junction temperature
Storage temperature
T_j
125
℃
T_stg
-55-125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Symbol Min. Typ. Max. Unit
0.28
V
V_F
0.36
V
0.54 0.60 V
I_R
5 μA
C_d
18 25 pF
Conditions
I_F=1mA
I_F=10mA
I_F=50mA
V_R=10V
V_R=0,f=1MHz
Document number: BL/SSSDD004
Rev.A
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