1SS387 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

BL Galaxy Electrical
Production specification
High Speed Switching Diode
FEATURES
z Low forward voltage.
z Fast reverse recovery time.
z Small total capacitance.
Pb
Lead-free
APPLICATIONS
z High-speed switching in surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
1SS387
G
1SS387
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
V_RRM
85
V
Reverse voltage
V_R
80
V
Continuous forward current
Surge current
I_F
100
mA
I_FSM
1
A
Total power dissipation
P_tot
150
mW
Junction temperature
Storage temperature
T_j
125
℃
T_stg
-55-125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol Min. Typ. Max. Unit
0.62
V
V_F
0.75
V
0.98 1.2 V
0.1 μA
I_R
0.5 μA
C_d
0.5 3
pF
t_rr
1.6 4
ns
Conditions
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=10mA
Document number: BL/SSSDD003
Rev.A
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