1SS372_14 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

Schottky Barrier Diode
FEATURES
z Small surface mounting type.
z Small package.
z Low forward voltage:V_F=0.23V(typ).
Pb
Lead-free
Production specification
1SS372
APPLICATIONS
z For general purpose applications.
ORDERING INFORMATION
Type No.
Marking
1SS372
N9
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
Diode reverse voltage
V_R
Average Forward Current
I_O
Forward Surge Current (10ms)
I_FSM
Power Dissipation
P_d
Junction temperature
T_j
Storage temperature range
T_stg
15
V
10
V
100
mA
1
A
100
mW
125
℃
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse current
Symbol
I_R
Forward voltage
V_F
Diode capacitance
C_T
PACKAGE OUTLINE
Test conditions
V_R=10V
I_F=1mA
I_F=5mA
I_F=100mA
V_R=0V, f=1MHz
MIN Typ MAX UNIT
20
μA
0.18
0.23 0.30 V
0.5
20
40
pF
F013
Rev.A
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