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| 1SS226 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |||
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BL Galaxy Electrical
Production specification
Surface mount switching diode
FEATURES
Pb
z Fast switching.
Lead-free
z Power dissipation. PD:150mW(Tamb=25â)
1SS226
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS226
C3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
VRM
85
V
DC Reverse Voltage
VR
80
V
Forward Current(max)
IFM
300
mA
Forward Output current
Io
100
mA
Peak forward surge current
@=1.0μs
@=1.0s
IFSM
2
A
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Pd
Tj
TSTG
150
mW
125
â
-55 to +125
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Diode Capacitance
Reverse Recovery Time
Symbol Min
V(BR)R
80
VF
IR
CD
trr
MAX
1.2
0.5
3.0
4.0
UNIT
V
V
μA
pF
ns
Test Condition
IR= 100μA
IF=100mA
VR=80V
VR=0V,f=1MHz
IF=IR=10mAIrr=0.1*IR
Document number: BL/SSSDC007
Rev.A
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