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| 1SS196_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type | |||
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Production specification
Surface mount switching diode
FEATURES
z Low forward voltage
Pb
VF(3)=0.9V(typ).
Lead-free
z Small total capacitance:CT=0.9pF(typ).
z Fast reverse recovery time:trr=1.6ns(typ).
1SS196
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS196
G3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Output current
Surge current (10ms)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
VRM
VR
Io
IFSM
Pd
Tj
TSTG
85
V
80
V
100
mA
2
A
150
mW
150
â
-55 to +150
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol Min Typ MAX UNIT Test Condition
V(BR)R
80
-
-
V IR= 100μA
- 0.60
-
IF=1mA
VF
- 0.72
-
V IF=10mA
- 0.90 1.2
IF=100mA
IR
-
-
0.1
μA VR=30V
-
-
0.5
VR=80V
Cj
-
0.9
3.0
pF VR=0V,f=1.0MHz
trr
-
1.6
4.0
ns IF=IR=10mAIrr=0.1*IR
C006
Rev.A
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