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| 1SS190_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type | |||
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Production specification
Surface mount switching diode
FEATURES
z Low forward voltage
VF=0.92V(typ).
z Small total capacitance:CT=2.2pF(typ).
z Fast reverse recovery time:trr=1.6ns(typ)
Pb
Lead-free
1SS190
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS190
E3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Output current
Surge current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
VRM
VR
Io
IFSM
Pd
Tj
TSTG
85
V
80
V
100
mA
2
A
350
mW
150
â
-55 to +150
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Total Capacitance
Reverse Recovery Time
Symbol Min Typ MAX UNIT Test Condition
V(BR)R
VF
IR
CT
trr
80
-
-
- 0.61
-
- 0.74
-
- 0.92 1.2
0.1
-
-
0.5
-
2.2
4.0
-
1.6
4.0
V IR= 100μA
IF=1mA
V IF=10mA
IF=100mA
μA VR=30V
VR=80V
pF VR=0V,f=1.0MHz
ns IF=IR=10mAIrr=0.1*IR
C004
Rev.A
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