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| 1SS184_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type | |||
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Production specification
Surface mount switching diode
FEATURES
z Low forward voltage
Pb
VF=0.9V(typ).
Lead-free
z Small total capacitance.
z Fast reverse recovery time:trr=1.6ns(typ).
1SS184
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS184
B3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Current
Surge Current (10ms)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
VRM
VR
Io
IFSM
PD
Tj
TSTG
85
V
80
V
100
mA
2
A
350
mW
150
â
-55 to +150
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
Min
80
-
-
-
IR
-
CT
-
trr
-
Typ
-
0.60
0.72
0.90
0.9
1.6
MAX
-
-
-
1.2
0.1
0.5
3.0
4.0
UNIT
V
V
μA
pF
ns
Test Condition
IR= 100μA
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V,f=1.0MHz
IF=IR=10mAIrr=0.1*IR
C002
Rev.A
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