1SS181 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

BL Galaxy Electrical
Production specification
Surface mount switching diode
FEATURES
z Low forward voltage
Pb
V_F(3)=0.92V(typ).
Lead-free
z Fast switching.
z Fast reverse recovery time:t_rr=1.6ns(typ)
1SS181
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS181
A3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward current(max)
Forward Output current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
V_RM
V_R
I_FM
I_o
P_d
T_j
T_STG
85
V
80
V
300
mA
100
mA
150
mW
125
℃
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol Min Typ _MAX
V_(BR)R
80 -
-
0.61
V_F
-
0.74
0.92 1.2
0.1
I_R
-
0.5
C_j
-
2.2 4.0
t_rr
-
1.6 4.0
UNIT ^{Test Condition}
V
I_R= 100μA
I_F=1mA
V
I_F=10mA
I_F=100mA
μA
V_R=30V
V_R=80V
pF ^VR^=0V,f=1.0MHz
ns
I_F=I_R=10mAI_rr=0.1*I_R
Document number: BL/SSSDC001
Rev.A
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