1N914 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
1N914,1N914A,1N914B
REVERSE VOLTAGE: 75 V
CURRENT 75 mA
FEATURES
Glass sealed envelope. (MSD)
V_RM=100V guaranteed
High reliability
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
DO - 35
MAXIMUM RATINGS (Ratings at 25 ambient temperature unless otherwise specified.
1N914,1N914A,1N914B
UNITS
Maximum DC reverse voltage
V_R
75
Maximum recurrent peak reverse voltage
V_RM
100
Average forward rectified current
half wave rectification with resistive load
I_O
75
Forward surge current t<1ms
t=1ms
t=1s
Power dissipation (note)
Junction temperature
Storage temperature range
I_FSM
P_tot
T_j
T_STG
4.0
1.0
0.5
250
175
- 65 --- + 175
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
V
V
mA
A
mW
ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified.
Min
Typ
Forw ard voltage @1N914,1N914A,I_F=10mA
-
-
1N914B,I_F=5mA
V_F
0.62
-
1N914B,I_F=100mA
-
-
Leakage current @V_R=20V
@V_R=75V
-
-
I_R
-
-
@V_R=20V,T_j=150
-
-
Capacitance
@ V_R=0V,f=1MH_Z
C_tot
-
-
Reverse recovery time @I_F=10mA,I_R=10mA,
R_L=100Ω,measured at I_R=1mA
t_rr
-
-
Voltage rise w hen sw itching on
tested w ith 50mA pulses t_r=20ns
V_fr
-
-
Thermal resistance junction to ambient (note ) R_θjA
-
-
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Max
1.0
0.72
1.0
25
5
50
4
8
UNITS
V
nA
µA
µA
pF
ns
2.5
V
500
/W
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Document Number 0268015
BLGALAXY ELECTRICAL
1.