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1N60P Datasheet, PDF (1/2 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE
BL GALAXY ELECTRICAL
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal s illicon junction m ajority carrier conduction
High current capability,Low forward voltage drop
Extrem ely low revers e current IR
Ultra s peed s witching characteris tics
Sm all tem perature coefficient of forward
ffffff characteris tics
Satis factory wave detection efficiency
For us e in RECORDER. TV. RADIO. TELEPHONE
as detectors ,s uper high s peed s witching circuits ,
s m all current rectifier
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
1N60P
VOLTAGE RANGE: 45 V
CURRENT: 0.1 A
DO - 35(GLASS)
ABSOLUTE RATINGS(LIMITING VALUES)
Parameters
Repetitive peak reverse voltage
Forw ard continuous current
Peak f orw ard surge current (t=1s)
TA=25
Storage and junction temperature range
Maximum lead temperature f or soldering during 10s at 4mm f rom case
Symbols
VRRM
IF
IF S M
TSTG/TJ
TL
Value
1N60P
45
50
500
XX- 55 ---- + 125
230
UNITS
V
mA
mA
ELECTRICAL CHARACTERISTICS
Parameters
Forward voltage
Reverse current
Junction capacitance
Detection ef f iciency (See FIG. 4)
Reverse recovery time
Thermal resistance junction to ambient
Symbols
Test Conditions
I F=1m A
VF
I F=200m A
IR
CJ
trr
Rθ J A
VR=15V
VR=10V f=1MHz
Vl=3V f=30MHz
CL=10pF RL=3.8K
I F=IR=1m A Irr=1m A RC=100
Min.
Value
Typ.
0.24
0.65
Max.
0.5
1.0
UNITS
V
0.5
1.0
A
6.0
pF
60.0
%
1.0
ns
400
/W
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Document Number 0265007
BLGALAXY ELECTRICAL
1.