1N4150 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes"

BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
1N4150
VOLTAGE RANGE: 50 V
CURRENT: 150 m A
DO - 35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
V_R
Peak reverse voltage
V_RM
Average forward rectified current V_R=0V
I_O
Forward surge current at t=1µs
I_FSM
Power dissipation
P_tot
Thermal resistance junction to ambient
R_thja
Junction temperature
T_j
Storage temperature range
T_STG
ELECTRICAL CHARACTERISTICS
Forward voltage at I_F=1mA
I_F=10mA
I_F=50mA
V_F
I_F=100mA
I_F=200mA
Leakage current @V_R=50V,T_J=25
V_R=50V,T_J=150
I_R
Capacitance at V_R=0V,f=1MH_Z,V_HF=50mV C_tot
Reverse recovery time
I_F=I_R=(10to100mA),i_R=0.1×I_R
t_rr
R_L=100
1N4150
50
50
150
4.0
500
500
175
-65 --- + 175
MIN.
0.54
0.66
0.76
0.82
0.87
-
-
-
-
MAX.
0.62
0.74
0.86
0.92
1.0
0.1
100
2.5
4.0
UNITS
V
V
mA
A
mW
K/W
UNITS
V
µA
pF
ns
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Document Number 0268022
BLGALAXY ELECTRICAL
1.