1N4001_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 A, Silicon Rectifiers

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1N4001 - - - 1N4007
PLASTIC SILICON RECTIFIERS
VOLT AGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
The plas tic m aterial carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Mounting pos ition: Any
Dimensions in millimeters
M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N
4001
1N
4002
1N
4003
1N
4004
1N
4005
1N
4006
1N
4007
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead lengths,
@ T_A =75
Peak f orw ard surge current
8.3ms s ingle half -s ine-w av e
s uperimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 1.0 A
V_RRM 50 100 200 400 600 800 1000
V
V_RMS 35 70 140 280 420 560 700
V
V_DC
50 100 200 400 600 800 1000
V
I_{F (AV)}
1 .0
A
I_{F SM}
30
A
V_F
1 .0
V
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
@ T_A =25
@ T_A =10 0
(Note1)
Typical thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
I_R
C_J
R_θJA
T_J
T_STG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
5 .0
5 0 .0
15
50
- 55 ---- + 125
- 55 ---- + 150
A
pF
̼W
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Document Number 1560102
BLGALAXY ELECTRICAL
1.