BL-L512PD Datasheet, PDF (1/4 Pages) BetLux Electronics – 5.1*3.0*7.4mm SILICON PHOTO DIODES

SILICON PHOTO DIODES
BL-L512PD
Fe atures:
Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES
Ø Choice of various viewing angles.
Ø Diffused and Water clear lens are available.
Ø Fast response time.
Ø High photo sensitivity.
Ø Small junction capacitance.The epoxy package itself is an IR filter, spectrally matched
to GaAs or GaAlAs IR emitter.
Applications:
Ø High speed photo detector
Ø Camera
Ø Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25°C
Paramete r
Symbol
Rating
Unit
Power Dissipation
Reverse Voltage
Operation Temperature
Storage Temperature
Lead Soldering Temperature
P_d
V_R
T_OPR
T_STG
TSOL
150
mW
35
V
-40 to +80
°C
-40 to +85
°C
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy °C
bulb)
Electronic Optical Characteristics at Ta=25°C
Items
Symbol Min. Typ.
Wavelength of Peak
Sensitivity
¦Ë_P
-
940
Open Circuit Voltage
V_OC
-
0.40
Short Circuit Current
I_SC
-
2
Reverse Light Current
I_L
-
3.5
Reverse Dark Current
ID
-
-
Reverse Break down
Voltage
V_BR
35
170
Viewing angle
2¦È1/2
-
35
Rise/Fall Time
Tr/T_f
-
6/6
Max.
-
-
-
-
10
-
-
-
Unit
nm
V
uA
uA
nA
V
Deg
nS
Condition
-
H=5mW/cm²
¦Ë_P=940 nm
H=5mW/cm²
¦Ë_P=940 nm
V_R=5V
H=0mW/cm2
V_R=10V
H=0mW/cm2
I_R=100uA
R_L=1000¦¸
V_R=10V
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4
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