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BL-L4802PD Datasheet, PDF (1/4 Pages) BetLux Electronics – 5*3.8*6.5mm SILICON PHOTO DIODES | |||
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SILICON PHOTO DIODES
BL-L4802PD
Fe atures:
à 5*3.8*6.5mm SILICON PHOTO DIODES
à Choice of various viewing angles.
à Diffused and Water clear lens are available.
à Fast response time.
à High photo sensitivity.
à Small junction capacitance.
à The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR
emitter.
Applications:
à High speed photo detector
à Camera
à Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25°C
Paramete r
Symbol
Rating
Unit
Power Dissipation
Reverse Voltage
Operation Temperature
Storage Temperature
Lead Soldering Temperature
Pd
VR
TOPR
TSTG
TSOL
150
35
-40 to +80
-40 to +85
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy
bulb)
mW
V
°C
°C
°C
Electronic Optical Characteristics at Ta=25°C
Items
Symbol Min. Typ.
Wavelength of Peak
Sensitivity
¦ÃP
-
940
Open
Voltage
Circuit VOC
-
0.35
Short
Current
Circuit
ISC
50
75
Reverse
Current
Light
IL
60
120
Reverse
Current
Dark
ID
-
5
Reverse
Break
down
VBR
35
170
Voltage
Viewing angle
2¦Ã1/2
-
140
Rise/Fall Time
Tr/Tf
-
50/50
Max.
-
-
-
-
30
-
-
-
Unit Condition
nm
-
V
H=5mW/cm2
uA
¦ÃP=940 nm
H=5mW/cm2
uA
¦ÃP=940 nm
VR=5V
nA
H=0mW/cm2
VR=10V
V
H=0mW/cm2
IR=100uA
Deg
nS
RL=1000¦¸
VR=10V
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4
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