BL-L3522PD Datasheet, PDF (1/4 Pages) BetLux Electronics – 5.1*3.0*7.4mm SILICON PHOTO DIODES

SILICON PHOTO DIODES
BL-L3522PD
Fe atures:
Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES
Ø Choice of various viewing angles.
Ø Diffused and Water clear lens are available.
Ø Fast response time.
Ø High photo sensitivity.
Ø Small junction capacitance.
Ø The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR
emitter.
Applications:
Ø High speed photo detector
Ø Camera
Ø Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25°C
Paramete r
Symbol
Rating
Unit
Power Dissipation
Reverse Voltage
Operation Temperature
Storage Temperature
Lead Soldering Temperature
P_d
V_R
T_OPR
T_STG
TSOL
150
35
-40 to +80
-40 to +85
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy
bulb)
mW
V
°C
°C
°C
Electronic Optical Characteristics at Ta=25°C
Items
Symbol Min. Typ.
Wavelength of Peak
Sensitivity
¦Ë_P
-
940
Open
Voltage
Circuit _VOC
-
0.35
Short
Current
Circuit
I_SC
-
75
Reverse
Current
Light
I_L
-
120
Reverse
Current
Dark
ID
-
5
Reverse
Break
down
Voltage
V_BR
35
170
Viewing angle
2¦È1/2
-
35
Rise/Fall Time
Tr/T_f
-
50/50
Max.
-
-
-
-
30
-
-
-
Unit Condition
nm
-
V
H=5mW/cm²
uA
¦Ë_P=940 nm
H=5mW/cm²
uA
¦Ë_P=940 nm
V_R=5V
nA
H=0mW/cm2
V_R=10V
V
H=0mW/cm2
I_R=100uA
Deg
nS
R_L=1000¦¸
V_R=10V
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4
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