BCP240T_15 Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP240T
ELECTRICAL CHARACTERISTICS (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
31.0
9.5
TYPICAL
32.5
31.2
11.0
8.7
36
27
MAX.
UNIT
dBm
dB
%
MAXIMUM RATINGS (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
Idss
120 mA
31 dBm
175° C
-60° C - 150° C
8.4 W
CONTINUOUS
8V
-3 V
690 mA
20 mA
@ 3dB Compression
150° C
-60° C - 150° C
6.9 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
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BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015