BCP160T Datasheet, PDF (2/4 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP160T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PAE
I_dss
G_m
V_p
BV_gd
BV_gs
R_th
PARAMETER/TEST CONDITIONS
TEST
FREQ.
Output Power @ P_1dB (V_ds = 8V, I_ds = 50% I_dss) 12 GHZ
Gain @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
12 GHZ
PAE @ P_1dB (Vds = 8V, Ids = 50% Idss)
12 GHZ
Saturated Drain Current (V_gs = 0V, V_ds = 1.0V)
Transconductance (V_ds = 3V, V_gs = 50% I_dss)
Pinch-off Voltage (I_ds = 1.6 mA, V_ds = 2V)
Drain Breakdown Voltage (I_gd = 1.6 mA, source open)
Source Breakdown Voltage (I_g = 1.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
29.5
10.0
320
-2.5
TYPICAL
30.5
11.0
40.0
480
640
-1.1
-15
-13
33
MAX.
640
-0.5
-12
UNIT
dBm
dB
%
mA
mS
V
V
V
° C/W
MAXIMUM RATING (T_a = 25° C)
SYMBOL
V_ds
V_gs
I_ds
I_gsf
P_in
T_ch
T_stg
P_t
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
I_dss
80 mA
30 dBm
175° C
-60° C - 150° C
6.0 W
CONTINUOUS
8V
-3 V
I_dss
14 mA
@ 3 dB Compression
150° C
-60° C - 150° C
5.0 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
P_IN_P_OUT/Gain, PAE (12 GHz)
Frequency = 12GHz
V_ds = 8 V, I_ds = 50% I_dss (Tuned for Power)
Frequency = 12GHz
V_ds = 8 V, I_ds = 50% I_dss (Tuned for Gain)
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BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011