BCP120C Datasheet, PDF (2/4 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP120C
MAXIMUM RATING (Ta = 25° C)
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Id
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
ABSOLUTE
12V
-6V
Idss
60 mA
29 dBm
175°C
-60°C ~ 150°C
4.1 W
CONTINUOUS
8V
-3 V
Idss
10 mA
@ 3 dB compression
150°C
-60°C ~ 150°C
3.4 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
PIN_POUT/Gain, PAE (18 GHz)
Frequency = 12 GHz
Vds = 8V, Ids = 180mA (Tuned for Power)
Frequency = 18 GHz
Vds = 8V, Ids = 180mA (Tuned for Power)
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BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2017
Rev. 1.1
February 2017