BMT352_16 Datasheet, PDF (1/22 Pages) BeRex Corporation – 3.0-4.0 GHz 1.5W High Linearity 5V 2-Stage Power Amplifier

BMT352
3.0-4.0 GHz 1.5W High Linearity 5V 2-Stage Power Amplifier
Device Features
 +5V/355mA at operating bias condition
 Gain = 20.7 dB @ 3.5 GHz
 P1dB = 31.5 dBm @ 3.5GHz
 LTE 20M ACLR = 21.8dBm Output Power at -50dBc @ 3.5GHz
 Intergrated interstage matching
 Lead-free/Green/RoHS-compliant QFN3x3 SMT package
Product Description
Typical Performance¹
BMYYTW35W2 _XX
The BMT352 is a high dynamic range two-stage
Parameter
Frequency
Unit
power amplifier, housed in a lead-free/green/
RoHS compliant 3x3mm² QFN package. The
3400 3500 3600 3700 3800 MHz
BMT352 uses a high reliability InGaP/GaAs HBT ^Gain
20.8 20.7 20.6 20.5 20.4 dB
process technology. The BMT352 is designed for ^S11
-18.0 -15.0 -16.5 -16.0 -17.0 dB
use where high linearity and gain are required.
S22
-9.0
-8.0
-7.0 -6.0 -5.0
dB
The BMT352 is able to deliver over 22 dBm out- OIP3²
47.0 45.0 47.0 45.0 41.5 dBm
put power from 3.0 to 4.0GHz while maintaining P1dB
31.4 31.5 31.8 31.7 31.4 dBm
superior ACLR performance with a few external LTE 20M ACLR 21.8 21.8 22.2 21.7 20.6 dBm
matching components. All devices are 100% RF/ _{WCDMA ACLR 22.1 22.1 22.4 22.0 21.0 dBm}
DC screened.
Noise Figure 5.1
5.1
5.2
5.5
5.8
dB
Applications
1 _{Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω}
2 _{OIP3 _ measured on two tones with a output power 17dBm/ tone , F2—F1 = 1 MHz..}
*ACLR Channel Power measured at -50dBc.
 Base station /Repeaters Infrastructure/Small Cell ^{- LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.}
 Commercial/Industrial/Military wireless system
- WCDMA set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob.
Min. Typical Max.
Unit
 LTE / WCDMA /CDMA Wireless Infrastructure _Bandwidth
3.0
4.0
GHz
Application Circuits
I_bias
I_cq @ (I_cq1 + I_cq2)
V_CC/V_bias
R_TH
26
mA
330
mA
5.0
V
12.9
°C/W
Absolute Maximum Ratings
Parameter
Rating
Unit
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +155
°C
Junction Temperature
+200
°C
Operating Voltage
Supply Current
Input RF Power
+6.0
V
1.5
A
26
dBm
*Operation of this device above any of these parameters may result in permanent damage.
BeRex
●website: www.berex.com
● email: [e-mail]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2017 BeRex
1
Rev. A