BMT332 Datasheet, PDF (1/25 Pages) BeRex Corporation – 700-2400 MHz 2W High Linearity 5V 2-Stage Power Amplifier

BMT332
700-2400 MHz 2W High Linearity 5V 2-Stage Power Amplifier
Device Features
 +5V/680mA at operating bias condition
 Gain = 27.3 dB @ 1850 MHz
 P1dB = 33.1 dBm @ 1850MHz
 LTE 10M ACLR = 23.5dBm Output Power at -50dBc @ 1850MHz
 Intergrated interstage matching
 Lead-free/Green/RoHS-compliant QFN5x5 SMT package
Product Description
Typical Performance¹
The BMT332 is a high dynamic range two-
stage power amplifier housed in RoHS com-
Parameter
Frequency
Unit
pliant 20 pin, 5x5mm QFN package. The
850 1750 1850 1960 2140 2350 MHz
BMT332 uses a high reliability InGaP/GaAs
HBT process technology. The BMT332 is de-
signed for use where high linearity and gain
is required. The BMT332 is able to deliver
over 23 dBm output power from 700 to
Gain
S11
S22
OIP3²
33.5 28.0 27.3 26.7 26.0 24.0 dB
-18.0 -30.0 -30.0 -26.0 -17.0 -17.0 dB
-14.5 -11.5 -11.5 -12.0 -11.0 -12.5 dB
50.0 50.0 49.0 49.0 47.5 47.5 dBm
2400MHz while maintaining superior ACLR ^P1dB
33.6 33.2 33.1 33.1 33.2 33.1 dBm
performance with a few external matching LTE 10M ACLR ^{23.4 23.4 23.5 23.2 23.8 23.2 dBm}
components. All devices are 100% RF/DC
screened.
Applications
WCDMA ACLR 23.5 23.7 23.7 23.5 24.0 23.5 dBm
Noise Figure 7.0 5.6 5.6 5.5 5.5 5.3 dB
1 _{Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω}
s2yOstIePm3 ._ _{measured on two tones with a output power 23dBm/ tone , F2-F1 = 1 MHz..}
 Base station /Repeaters Infrastructure
*ACLR Channel Power measured at -50dBc.
- LTE set-up: 3GPP LTE, FDD E-TM3.1, 10MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.
 Commercial/Industrial/Military wireless system - WCDMA set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob.
 LTE / WCDMA /CDMA Wireless Infrastructure
Application Circuits
Bandwidth
I_bias @ (I_REF1&2 + I_B1&2)
I_C @ (I_C1 + I_C2)
V_CC/V_Bias
R_TH
Min. Typical Max.
700
2400
33
680
5.0
7.9
Unit
MHz
mA
mA
V
°C/W
Absolute Maximum Ratings
*external matching circuit: refer to the page 4 to 19.
Parameter
Rating
Unit
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +155
°C
Junction Temperature
+200
°C
Operating Voltage
+6
V
Supply Current
2000
mA
Input RF Power
23
dBm
*Operation of this device above any of these parameters may result in permanent damage.
BeRex
●website: www.berex.com
● email: [e-mail]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2013 BeRex
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Rev. B