BMT321_16 Datasheet, PDF (1/23 Pages) BeRex Corporation – 0.7-2.8 GHz 1.5W High Linearity 5V 2-Stage Power Amplifier

BMT321
0.7-2.8 GHz 1.5W High Linearity 5V 2-Stage Power Amplifier
Device Features
 +5V/355mA at operating bias condition
 Gain = 27.0 dB @ 1.9 GHz
 P1dB = 32.5 dBm @ 1.9GHz
 LTE 20M ACLR = 22dBm Output Power at -50dBc @ 1.9GHz
 Intergrated interstage matching
 Lead-free/Green/RoHS-compliant QFN3x3 SMT package
Product Description
Typical Performance¹
The BMT321 is a high dynamic range two- ^Parameter
Frequency
Unit
stage power amplifier, housed in a lead-
free/green/RoHS compliant 3x3mm QFN
package. The BMT321 uses a high reliabil- ^Gain
ity InGaP/GaAs HBT process technology. ^S11
0.9
1.8
1.9 2.14 2.65 GHz
29.8 27.4 27.0 25.3 22.3 dB
-20.0 -18.0 -18.0 -20.0 -20.0 dB
The BMT321 is designed for use where high S22
-6.0
-8.0 -10.0 -12.0 -6.5
dB
linearity and gain are required. The BMT321
is able to deliver over 22 dBm output power
from 0.7 to 2.8GHz while maintaining supe-
rior ACLR performance with a few external
matching components. All devices are 100%
RF/DC screened.
Applications
OIP3²
50.0 50.0 50.0 50.0 50.0 dBm
P1dB
30.2 32.4 32.5 32.4 31.4 dBm
LTE 20M ACLR 20.0 22.3 22.0 22.0 22.2 dBm
LTE 10M ACLR 21.0 23.5 23.1 22.8 22.9 dBm
WCDMA ACLR 21.1 23.5 23.2 23.1 23.0 dBm
Noise Figure 11.5
5.3
5.0
5.2
5.0
dB
1 _{Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω}
2 _{OIP3 _ measured on two tones with a output power 17dBm/ tone , F2—F1 = 1 MHz..}
*OIP3_tuned for max OIP3

Base station /Repeaters Infrastructure/Small Cell
*ACLR Channel Power measured at -50dBc.
- LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.
 Commercial/Industrial/Military wireless system ^{- LTE set-up: 3GPP LTE, FDD E-TM3.1, 10MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.}
- WCDMA set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob.
 LTE / WCDMA /CDMA Wireless Infrastructure
Min. Typical Max.
Unit
Bandwidth
0.7
2.8
GHz
Application Circuits
I_bias
I_cq @ (I_cq1 + I_cq2)
V_CC/V_bias
R_TH
26
mA
355
mA
5.0
V
12.9
°C/W
Absolute Maximum Ratings
Parameter
Rating
Unit
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +155
°C
Junction Temperature
+200
°C
Operating Voltage
+6.0
V
Supply Current
1.5
A
Input RF Power
26
dBm
*Operation of this device above any of these parameters may result in permanent damage.
BeRex
●website: www.berex.com
● email: [e-mail]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2015 BeRex
1
Rev. B