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BGS2 Datasheet, PDF (1/8 Pages) BeRex Corporation – 50-4000 MHz SILICON GERMANIUM Gain Block | |||
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BGS2
50-4000 MHz SILICON GERMANIUM Gain Block
Device Features
ï· Single Fixed 3V supply
ï· No Dropping Resistor Required
ï· No matching circuit needed
ï· Lead-free/Green/RoHS compliant SOT-363 package
ï· Application: Driver Amplifier, Cellular, PCS, GSM,
UMTS, WCDMA, Wireless Data
Part Marking (X: Wafer number)
OUT
GND
BS2X GND
GND
GND
IN
Pin Description
RF IN
3
RF OUT
6
GND 1,2,4,5
Product Description
BeRexâs BGS2 is a high SiGe HBT MMIC am-
plifier, internally matched to 50 Ohms with-
out the need for external components. De-
signed to run directly from a 3V supply. The
BGS2 is designed for high linearity 3V gain
block applications . It is packaged in a RoHS-
compliant with SOT-363 surface mount
package.
Applications
ï· Driver Amplifier
ï· Cellular, PCS, GSM, UMTS, WCDMA
Typical Performance1
Parameter
Frequency
Unit
70 900 1900 2450 2650 3500 MHz
Gain
26.5 23.6 19.8 18.1 17.2 15 dB
S11
-19.6 -18.3 -18.6 -18.4 -17.6 -13.7 dB
S22
OIP32
-15.6 -12.8 -9.9 -10.5 -13.2 -15.7 dB
28 25.5 24.5 22.5 25 19.2 dBm
P1dB
15.6 13.4 12.8 10.8 10.4 8.7 dBm
N.F
2.7 2.3 2.2 2.3 2.5 2.7 dB
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 ⦠system.
2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.
Applications Circuit
Application Circuit Values Example
Freq.
C1/C2
L1
(1608 Chip Ind.)
70~900MHz
2nF
1uH
900MHz ~ 3GHz
100pF
56nH
3GHz ~ 4GHz
100pF
27nH
C3 C4 C5
+3V
Bandwidth
IC @ (Vc = 3V)
VC
dG/dT
RTH
Min.
Typical Max.
Unit
70
4000
MHz
30
34
38
mA
3.0
V
-0.005
dB/°C
130
°C/W
RFin
C1
L1
BGS2
Absolute Maximum Ratings
Parameter
Rating
Unit
C2
RFout Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +155
°C
Junction Temperature
+150
°C
*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH
**less than 56nH improves RF performance at over 0.9GHz.
*1uH or higher value L1 improves RF performance at under 900MHz.
*Optimum value of L1 may vary with board design.
Operating Voltage
+3.8
V
Supply Current
100
mA
Input RF Power
15
dBm
Operation of this device above any of these parameters may result in permanent damage.
*C1,C2=2000pF, L1=1uH for 70MHz application,
*C1,C2=100pF, L1=27nH for 3.5GHz application.
BeRex
âwebsite: www.berex.com
âemail: sales@berex.com
1
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2015 BeRex
Rev. E
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