BCP160T_15 Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP160T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
The BeRex BCP160T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1600 micron gate width
making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26
GHz. The product may be used in either wideband or narrow-band applications. The BCP160T is produced using
state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 33 dBm Typical Output Power
• 10.5 dB Typical Gain @ 12 GHz
• 60% PAE Typical @12 GHz
• 0.25 X 1600 µm Recessed Gate
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Transconductance (Vds = 3V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 1.6 mA, Vds = 2V)
Drain Breakdown Voltage (Igd = 1.6 mA, source open)
Source Breakdown Voltage (Ig = 1.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
320
-2.5
TYPICAL
480
640
-1.1
-15
-13
33
MAX.
640
-0.5
-12
UNIT
mA
mS
V
V
V
° C/W
ELECTRICAL CHARACTERISTICS (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
32.0
9.5
TYPICAL
33.2
33.0
10.4
6.7
63
47
MAX.
UNIT
dBm
dB
%
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015