BCP160C Datasheet, PDF (1/4 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP160C
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
The BeRex BCP160C is a GaAs Power pHEMT with a nominal 0.25-micron by 1600-micron gate making this product
ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are
required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP160C is
produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 31.5 dBm Typical Output Power
• 10 dB Typical Gain @ 12 GHz
• 0.25 X 1600 Micron Recessed Gate
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
PARAMETER/TEST CONDITIONS
TEST
FREQ.
P1dB
Output Power @ P1dB (Vds = 8V, Id = 240mA)
12 GHZ
18 GHz
G1dB Gain @ P1dB (Vds = 8V, Id = 240mA)
12 GHZ
18 GHz
PAE PAE @ P1dB (Vds = 8V, Id = 240mA)
12 GHZ
18 GHz
Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.1V)
Gm
Transconductance (Vds = 2V, Id = 240mA)
Vp
Pinch-off Voltage (Ids = 1.6 mA, Vds = 2V)
BVgd Drain Breakdown Voltage (Ig = -1.6mA, source open)
BVgs Source Breakdown Voltage (Ig = -1.6mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
30.0
29.0
8.5
6.0
340
-2.5
TYPICAL
31.5
30.5
10
7.5
55
45
510
620
-1.2
-15
-13
30
MAX.
680
-12
UNIT
dBm
dB
%
mA
mS
V
V
V
°C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2017
Rev. 1.1
February 2017