BCP080C Datasheet, PDF (1/4 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP080C
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
The BeRex BCP080C is a GaAs Power pHEMT with a nominal 0.25-micron by 800-micron gate making this product
ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are
required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP080C is
produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 28.5 dBm Typical Output Power
• 11 dB Typical Gain @ 12 GHz
• 0.25 X 800 Micron Recessed Gate
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
PARAMETER/TEST CONDITIONS
TEST
FREQ.
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 120mA)
12 GHZ
18 GHz
G1dB Gain @ P1dB (Vds = 8V, Id = 120mA)
12 GHZ
18 GHz
PAE PAE @ P1dB (Vds = 8V, Id = 120mA)
12 GHZ
18 GHz
Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Gm
Transconductance (Vds = 2V, Id = 120mA)
Vp
Pinch-off Voltage (Ids = 0.8mA, Vds = 2V)
BVgd Drain Breakdown Voltage (Igd = 0.8mA, source open)
BVgs Source Breakdown Voltage (Ig = 0.8mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
27.0
25.0
9.5
7.0
165
-2.5
TYPICAL
28.5
26.5
11.0
8.5
60
45
245
310
-1.2
-15
-13
57
MAX.
325
-12
UNIT
dBm
dB
%
mA
mS
V
V
V
°C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2017
Rev. 1.1
February 2017