BCP030T Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP030T is produced using state of the art metallization with SI₃N₄ passivation and is screened to
assure reliability.
PRODUCT FEATURES
 25 dBm Typical Output Power
 14 dB Typical Gain @ 12 GHz
 0.25 X 300 Micron Recessed Gate
APPLICATIONS
 Commercial
 Military / Hi-Rel.
 Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PAE
NF
I_dss
G_m
V_p
BV_gd
BV_gs
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50%
I_dss)
Gain @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
50 Ohm Noise Figure (V_ds=2V, I_ds=15 mA
12 GHz
Saturated Drain Current (V_gs = 0V, V_ds = 1.0V)
Transconductance (V_ds = 2V, V_gs = 50% I_dss)
Pinch-off Voltage (I_ds = 0.3 mA, V_ds = 3V)
Drain Breakdown Voltage (I_g = 0.3 mA, source open)
Source Breakdown Voltage (I_g = 0.3 mA, drain open)
R_th
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
24.5
13.0
60
-2.5
TYPICAL
25.5
25.5
14.0
10.5
65
60
1.14
90
120
-1.1
-15.0
-13.0
121
MAX.
120
-0.5
-12.0
UNIT
dBm
dB
%
dB
mA
mS
V
V
V
°C/W
www.berex.com
BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011