BCP030C Datasheet, PDF (1/4 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP030C
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
The BeRex BCP030C is a GaAs Power pHEMT with a nominal 0.25-micron by 300-micron gate making this product
ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are
required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP030C is
produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 24.5 dBm Typical Output Power
• 13.5 dB Typical Gain @ 12 GHz
• 0.25 X 300 Micron Recessed Gate
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Id = 45mA)
G1dB
Gain @ P1dB (Vds = 8V, Id = 45mA)
PAE PAE @ P1dB (Vds = 8V, Id = 45mA)
NF Noise figure (Vds = 2V, Id = 15 mA)
TEST
FREQ.
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHz
Idss
Saturated Drain Current (Vgs = 0V, Vds = 2.0V)
Gm
Transconductance (Vds = 2V, Id = 45mA)
Vp
Pinch-off Voltage (Ids = 0.3mA, Vds = 2V)
BVgd Drain Breakdown Voltage (Ig = -0.3mA, source open)
BVgs Source Breakdown Voltage (Ig = -0.3mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
23.0
23.0
12.0
9.0
60
-2.5
TYPICAL
24.5
24.5
13.5
10.5
60
55
1.1
90
115
-1.2
-15
-13
115
MAX.
120
-12
UNIT
dBm
dB
%
dB
mA
mS
V
V
V
°C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2017
Rev. 1.1
February 2017