BCF240T Datasheet, PDF (1/6 Pages) BeRex Corporation – 30.4 dBm Typical Output Power

BCF240T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm)
The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either
wideband or narrow-band applications. The BCF240T is produced using state of the art metallization and
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for
increased reliability.
Product Features
• 30.4 dBm Typical Output Power
• 9.8 dB Typical Power Gain @ 12 GHz
• Low Phase Noise
• 0.3 X 2400 Micron Recessed Gate
Applications
• Commercial
• Military / Hi-Rel
• Test & Measurement
DC CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
Idss Saturated Drain Current (Vgs = 0V, Vds = 2V)
Gm Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp Pinch-off Voltage (Ids = 2400 µA, Vds = 3V)
BVgd Drain Breakdown Voltage (Ig = 2.4 mA, source open)
BVgs Source Breakdown Voltage (Ig = 2.4 mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MINIMUM
480
-3.5
TYPICAL
720
400
-2.0
-15
-10
23
MAXIMUM UNIT
960
mA
mS
V
-11
V
-7
V
°
C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3