BCF120T Datasheet, PDF (1/6 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCF120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either
wideband or narrow-band applications. The BCF120T is produced using state of the art metallization and
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for
increased reliability.
Product Features
• 28.0 dBm Typical Output Power
• 11.0 dB Typical Power Gain @ 12 GHz
• Low Phase Noise
• 0.3 X 1200 Micron Recessed Gate
Applications
• Commercial
• Military / Hi-Rel
• Test & Measurement
ELECTRICAL CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
Idss Saturated Drain Current (Vgs = 0V, Vds = 3V)
Gm Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V)
BVgd Drain Breakdown Voltage (Ig = 1.2 mA, source open)
BVgs Source Breakdown Voltage (Ig = 1.2 mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MINIMUM
200
140
-3.5
TYPICAL
340
200
-2.0
-15
-11
40
MAXIMUM UNIT
440
mA
mS
V
-11
V
-7
V
° C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3