ASX620_17 Datasheet, PDF (1/10 Pages) Advanced Semiconductor Business Inc. – 150 ~ 3000 MHz MMIC Amplifier

ASX620
150 ~ 3000 MHz MMIC Amplifier
Features
 29.5 dB Gain at 900 MHz
 33 dBm P1dB at 900 MHz
 48 dBm Output IP3 at 900 MHz
 MTTF > 100 Years
 Two Power Supplies
Description
The ASX620, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 3 GHz. The amplifier is available in
a SOIC8 package and passes through the strin-
gent DC, RF, and reliability tests.
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
29.5
S11
dB
-15
S22
dB
-8
Output IP3¹⁾
dBm
48
Noise Figure
dB
6.7
Output P1dB
dBm
33
Current
mA
950
Device Voltage
V
+5
1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
ASX620
Package Style: SOIC8
Application Circuit
 DMB (196 ~ 216 MHz)
 IF (350 MHz)
 CDMA
 GSM
 RFID (USA)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
Min
MHz
dB
28.5
dB
dB
dBm
46
dB
dBm
31
mA
900
V
Typ
900
29.5
-15
-8
48
6.7
33
950
+5
Max
7.0
1000
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50 matched)¹⁾
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
12 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin Configuration
Pin No. Function
1
2nd stage RF IN
2
1st stage RF OUT
3,5,8 GND
4
1st stage RF IN
6,7
2nd stage RF OUT
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ASB Inc.  [e-mail]  Tel: [phone]
February 2017