BLV640 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-channel Enhancement Mode Power MOSFET

BLV640
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
BV_DSS
R_DS(ON)
I_D
200V
0.18Ω
18A
Description
This advanced low voltage MOSFET is produced
using Belling’s proprietary MOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25^oC unless otherwise noted )
Symbol
V_DS
V_GS
I_D
I_DM
P_D
E_AS
I_AR
E_AR
Tj
T_SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 ^oC)
Drain Current (pulsed) (Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note2)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction Temperature Range
Storage Temperature Range
Value
200
+ 30
18
11
72
125
1.0
580
18
13
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
R_{th j-c}
R_{th j-a}
Parameter
Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Max.
Value
0.5
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o_C
o_C
Units
℃/ W
℃/ W
http://www.belling.com.cn
-1-
Total 6 Pages
2008.08.08