BLV297 Datasheet, PDF (1/1 Pages) SHANGHAI BELLING CO., LTD. – N-channel Enhancement Mode Power MOSFET

BLV297
N-channel Enhancement Mode Power MOSFET
• Ease of Paralleling
• Fast Switching
• Simple Drive Requirements
BV_DSS
R_DS(ON)
I_D
200V
2.0Ω
0.65A
Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency logic level circuit.
o Die size with scribe line
Scribe line
o Die Thickness
o Metallization
Top
Bottom
o Bonding Pad Size
Gate
Source
o Passivation
1570µm X 1570µm
80um
300± 20um
Al
Ti / Ni / Ag
140µm X 102µm
540µm X 540µm
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
BV_DSS
R_DS(ON)
V_GS(th)
I_DSS
I_GSS
V_SD
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward On Voltage
V_GS=0V, I_D=250uA
V_GS=10V, I_D=0.65A
V_DS=V_GS, I_D=400uA
V_DS=200V, V_GS=0V
V_GS= 20V
V_GS=0V, I_S=0.65A
Min.
200
-
0.5
-
-
-
Typ.
-
-
-
-
-
-
Max.
-
2.0
1.8
0.1
10
1.2
Units
V
Ω
V
uA
nA
V
http://www.belling.com.cn
-1-
Total 1 Pages
2/27/2008