BLM9926 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM9926
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM9926 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● V_DS =20V,I_D =6A
R_DS(ON) < 30mΩ @ V_GS=4.5V
R_DS(ON) < 40mΩ @ V_GS=2.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
9926
BLM9926
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
20
±12
6
3.8
25
1.25
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
R_θJA
100
℃/W
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