BLM8811 Datasheet, PDF (1/4 Pages) SHANGHAI BELLING CO., LTD. – Internal protection diode

BLM8811
12V, 21A, 5.5mΩ, Dual N-Channel Power MOSFET
Features
 2.5V drive
 Internal protection diode
 Common-drain type
Applications
 Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Source to Source Voltage
Gate to Source Voltage
Symbol
VSSS
VGSS
Conditions
Source Current (DC)
Source Current (Pulse)
IS
ISP
PW100s, duty cycle1%
Total Dissipation
Junction Temperature
PT
When mounted on ceramic substrate
(5000mm20.8mm)
Tj
Storage Temperature
Tstg
Value
Unit
12 V
8 V
21 A
100 A
2.5 W
150 C
- 55 to +150 C
Note: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are
exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Junction to Ambient
R_JA
When mounted on ceramic substrate
(5000mm2 X 0.8mm)
Value
60
Unit
C /W
Electrical Characteristics at Ta 25C
Parameter
Source to Source Breakdown
Value
Symbol
Conditions
min
typ
max ^Uni
t
V(BR)SSS IS=1mA, VGS=0V
Test Circuit 1
12
V
Zero-Gate Voltage Source
ISSS
VSS=10V,
Test Circuit 1
1 A
Gate to Source Leakage Current IGSS
VGS=±8V,
Test Circuit 2
5 A
Gate Threshold Voltage
VGS(th) VSS=6V, IS=1mA Test Circuit 3 0.5
1.3 V
Forward Transconductance
gFS
VSS=6V, IS=3A
Test Circuit 4
19
S
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