BLM8205 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM8205
N-Channel Enhancement Mode Power MOSFET
Description
The BLM8205 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 19.5V,ID = 4A
RDS(ON) <37mΩ @ VGS=2.5V
RDS(ON) < 27mΩ @ VGS=4.5V
D1
D2
G1
G2
S1
S2
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
8205
BLM8205
SOT23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
19.5
±10
4
25
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
Zero Gate Voltage Drain Current
IDSS
VDS=19.5V,VGS=0V
100
℃ /W
Min Typ Max Unit
19.5 21
-
V
-
-
1
µA
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