BLM7002 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM7002
N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = 60V,ID = 0.115A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
● Lead free product is acquired
● Surface Mount Package
Application
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Package Marking And Ordering Information
Device Marking
Device
Device Package
7002
BLM7002
SOT-23
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
625
℃ /W
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