BLM4953 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – P-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM4953
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM4953 uses advanced trench technology to prov ide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -5.1A
RDS(ON) < 105mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V
D1
D2
G1
G2
S1
S2
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4953
BLM4953
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
50
℃ /W
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