BLM4435 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – P-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM4435
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
GENERAL FEATURES
● VDS = -30V,ID = -9.1A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 20mΩ @ VGS=-10V
D
G
S
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery Switch
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4435
BLM4435
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-9.1
-50
3.1
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
40
℃ /W
Min Typ Max Unit
-30 -33
-
V
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