BLM3404 Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM3404
N-Channel Enhancement Mode Power MOSFET
Description
The BLM3404 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
D
G
Genera Features
● V_DS = 30V,I_D = 5.8A
R_DS(ON) < 31mΩ @ V_GS=10V
R_DS(ON) < 43mΩ @ V_GS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Load switch
●PWM application
S
Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3404
BLM3404
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±20
5.8
20
1.4
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
89
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=30V,V_GS=0V
Min Typ Max Unit
30 33
-
V
-
-
1
μA
Page1
www.belling.com.cn
V2.0