BLM3050K Datasheet, PDF (1/6 Pages) SHANGHAI BELLING CO., LTD. – N-Channel Enhancement Mode Power MOSFET

Pb Free Product
BLM3050K
N-Channel Enhancement Mode Power MOSFET
Description
The BLM3050K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =30V,I_D =50A
R_DS(ON) < 11mΩ @ V_GS=10V
R_DS(ON) < 16mΩ @ V_GS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3050K
BLM3050K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
I_D
I_D (100℃)
I_DM
P_D
Single pulse avalanche energy (Note 5)
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±20
50
35
140
60
0.4
70
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
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